Referinta: BHR4433GL
Marca: XIAOMI
Xiaomi Mi Wireless Outdoor Security Camera 1080p
Xiaomi Mi Wireless Outdoor Security Camera 1080p
Filtrare dupa
Categorii
Categorii
Disponibilitate
Disponibilitate
Marca
Marca
Greutate
Greutate
0 kg - 0,1 kg
Pret
Pret
26,00 lei - 1.508,00 lei
Blue banner
Subcategorii
Sunt 29 produse.
Referinta: BHR4433GL
Marca: XIAOMI
Xiaomi Mi Wireless Outdoor Security Camera 1080p
Referinta: BHR6398GL
Marca: XIAOMI
Xiaomi Outdoor Camera AW200 White
Referinta: BHR5435GL
Marca: XIAOMI
Xiaomi Mi Temerature and Humidity Monitor Pro
Referinta: NUN4126GL
Marca: XIAOMI
Xiaomi Mi Smart Home Temperature & Humidity Monitor 2 WHITE
Referinta: SSDPEKKW020T8X1 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2.05 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Referinta: SSDPEKKW256G801 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare256 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate205000 IOPSMaximum Random Write Rate265000 IOPSMaximum Sequenti
Referinta: SSDPEKKW128G801 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare128 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate105000 IOPSMaximum Random Write Rate160000 IOPSMaximum Sequenti
Referinta: SSDPEKKW512G801 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequenti
Referinta: SSDPEKNW020T8X1 A
Marca: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare2 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
Referinta: SSDPEKNW010T8X1 A
Marca: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare1 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
Referinta: SSDSC2KW512G8X1 A
Marca: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate75000 IOPSMaximum Rando
Referinta: SSDSC2KW128G8X1 A
Marca: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare128 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate70000 IOPSMaximum Rando
Referinta: SSDPEKNW010T9X1 A
Marca: INTEL
Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCI Express 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate160000 IOPSMaximum Random Write Ra
Referinta: SSDPEKKW010T8X1 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1.02 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Referinta: SSDPEKNW020T801 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
Referinta: SSDPEKNW512G8X1 A
Marca: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare512 GBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate90000 IOPSMaximum Random Write Rate22