Referinta: 6-EVF-80
Marca: Chilwee
Baterie semitractiune Deep Cycle 12V 80Ah Chilwee 6-EVF-80 GEL
Baterie semitractiune Deep Cycle 12V 80Ah Chilwee 6-EVF-80 GEL
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Referinta: 6-EVF-80
Marca: Chilwee
Baterie semitractiune Deep Cycle 12V 80Ah Chilwee 6-EVF-80 GEL
Referinta: 6-EVF-100A
Marca: Chilwee
Baterie semitractiune Deep Cycle 12V 100Ah Chilwee 6-EVF-100A GEL
Referinta: 6-EVF-120A
Marca: Chilwee
Baterie semitractiune Deep Cycle 12V 120Ah Chilwee 6-EVF-120A GEL
Referinta: CL27FF
Marca: ASROCK
ASROCK CL27FF 27" GAMING MONITOR, Aspect Ratio: 16:9, IPS, Rezolutie: 1920 x 1080 FHD, Luminozitate: 300 cd/m² , Refresh rate: 100Hz, Contrast: 1000 :1, Unghi vizualizare: 178°(H) / 178°(V), 16.7 M culori, Timp raspuns:1ms(MPRT), Flicker-free, Low
Referinta: CL25FF
Marca: ASROCK
ASROCK CL25FF 24.5" GAMING MONITOR, Aspect Ratio: 16:9, IPS, Anti- Glare, Rezolutie: 1920 x 1080, Refresh Rate: 100Hz, Luminozitate: 300 cd/m², Contrast Ratio: 1300 :1, Unghi vizualizare: 178°(H) / 178°(V), 16.7 M culori, Timp raspuns: 1ms(MPRT), Fl
Referinta: SSDPEKKW020T8X1 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2.05 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Referinta: SSDPEKKW256G801 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare256 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate205000 IOPSMaximum Random Write Rate265000 IOPSMaximum Sequenti
Referinta: SSDPEKKW128G801 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare128 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate105000 IOPSMaximum Random Write Rate160000 IOPSMaximum Sequenti
Referinta: SSDPEKKW512G801 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequenti
Referinta: SSDPEKNW020T8X1 A
Marca: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare2 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
Referinta: SSDPEKNW010T8X1 A
Marca: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare1 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
Referinta: SSDSC2KW512G8X1 A
Marca: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate75000 IOPSMaximum Rando
Referinta: SSDSC2KW128G8X1 A
Marca: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare128 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate70000 IOPSMaximum Rando
Referinta: SSDPEKNW010T9X1 A
Marca: INTEL
Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCI Express 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate160000 IOPSMaximum Random Write Ra
Referinta: SSDPEKKW010T8X1 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1.02 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Referinta: SSDPEKNW020T801 A
Marca: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write