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Best Sellers
SAMSUNG 970 EVO PRO 512GB SSD, M.2 2280, NVMe, Read/Write: 3400 / 2500 MB/s, Random Read/Write IOPS 370K/500K
898,20 L
Factor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.0 x4SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare la exteriorBlackMaximum Random Read Rate370000 IOP
SAMSUNG 970 EVO PLUS 1TB SSD, M.2 2280, NVMe, Read/Write: 3500 / 3300 MB/s, Random Read/Write IOPS 600K/550K
677,51 L
Factor formaM.2 22x80mmCapacitate de stocare1 TBSuporta canal de dateNVMe PCIe® Gen3SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare externăNegruMaximum Random Read Rate19000 IOPSMaximum R
SAMSUNG 970 EVO PLUS 2TB SSD, M.2 2280, NVMe, Read/Write: 3500 / 3300 MB/s, Random Read/Write IOPS 620K/560K
1.159,87 L
Locatie dispozitivInternFactor formaM.2 22x80mmCapacitate de stocare2 TBSuporta canal de dateNVMe PCIe® Gen3SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare externăNegruMaximum Random Read
Intel SSD 760p Series (2.048TB, M.2 80mm PCIe 3.0 x4, 3D2, TLC) Retail Box Single Pack
1.536,38 L
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2.05 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Samsung SSD 256GB 860 Pro SATA 6Gbps 2.5" V-NAND MLC 560/530 MB/s Max. 100K IOPS / 90K IOPS 300TBW endurance /5yrs
440,39 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare256 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory
SAMSUNG 860 EVO 500GB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K
423,38 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare500 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory
SAMSUNG 860 EVO 250GB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K
205,86 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare250 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory
Intel SSD 760p Series (256GB, M.2 80mm, PCIe 3.0 x4, 3D2, TLC) Generic Single Pack
451,08 L
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare256 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate205000 IOPSMaximum Random Write Rate265000 IOPSMaximum Sequenti
Intel SSD 760p Series (128GB, M.2 80mm, PCIe 3.0 x4, 3D2, TLC) Generic Single Pack
183,08 L
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare128 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate105000 IOPSMaximum Random Write Rate160000 IOPSMaximum Sequenti
Intel SSD 760p Series (512GB, M.2 80mm, PCIe 3.0 x4, 3D2, TLC) Generic Single Pack
687,30 L
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequenti
SAMSUNG 860 PRO 1TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 560 / 530 MB/s, Random Read/Write IOPS 100K/90K
1.077,60 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare1 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory Ce
Samsung SSD 512GB 860 Pro SATA 6Gbps 2.5" V-NAND MLC 560/530 MB/s Max. 100K IOPS / 90K IOPS 600TBW endurance /5yrs
640,43 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory
SAMSUNG 860 EVO 1TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K
675,90 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare1 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache1 GBSSD ControllerSamsung MJXFlash Memory Cell
Intel SSD 660p Series (2.0TB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack
1.202,93 L
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare2 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
Intel SSD 660p Series (1.0TB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack
602,51 L
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare1 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
SAMSUNG 860 EVO 2TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K
1.602,84 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare2 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache4 GBSSD ControllerSamsung MJXFlash Memory Cell
SAMSUNG 870 QVO 1TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 560 / 530 MB/s, Random Read/Write IOPS 98K/88K
592,13 L
Locatie dispozitivInternFactor forma2.5" 7mmCapacitate de stocare1 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsSSD ControllerSamsung MKXTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level
Intel SSD 545s Series (512GB, 2.5in SATA 6Gb/s, 3D2, TLC) Retail Box Single Pack
424,96 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate75000 IOPSMaximum Rando
Intel SSD 545s Series (128GB, 2.5in SATA 6Gb/s, 3D2, TLC) Retail Box Single Pack
124,20 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare128 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate70000 IOPSMaximum Rando
Intel SSD 665p Series (1.0TB, M.2 80mm PCIe 3.0 x4, 3D3, QLC) Retail Box Single Pack
968,47 L
Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCI Express 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate160000 IOPSMaximum Random Write Ra
Intel SSD 760p Series (1.024TB, M.2 80mm PCIe 3.0 x4, 3D2, TLC) Retail Box Single Pack
1.301,01 L
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1.02 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Intel SSD 660p Series (2.0TB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Generic Single Pack
1.202,93 L
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
Intel SSD 660p Series (512GB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack
267,27 L
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare512 GBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate90000 IOPSMaximum Random Write Rate22
SAMSUNG 970 EVO PRO 512GB SSD, M.2 2280, NVMe, Read/Write: 3400 / 2500 MB/s, Random Read/Write IOPS 370K/500K
898,20 L
Factor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.0 x4SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare la exteriorBlackMaximum Random Read Rate370000 IOP
SAMSUNG 970 EVO PLUS 1TB SSD, M.2 2280, NVMe, Read/Write: 3500 / 3300 MB/s, Random Read/Write IOPS 600K/550K
677,51 L
Factor formaM.2 22x80mmCapacitate de stocare1 TBSuporta canal de dateNVMe PCIe® Gen3SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare externăNegruMaximum Random Read Rate19000 IOPSMaximum R
SAMSUNG 970 EVO PLUS 2TB SSD, M.2 2280, NVMe, Read/Write: 3500 / 3300 MB/s, Random Read/Write IOPS 620K/560K
1.159,87 L
Locatie dispozitivInternFactor formaM.2 22x80mmCapacitate de stocare2 TBSuporta canal de dateNVMe PCIe® Gen3SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare externăNegruMaximum Random Read
Intel SSD 760p Series (2.048TB, M.2 80mm PCIe 3.0 x4, 3D2, TLC) Retail Box Single Pack
1.536,38 L
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2.05 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Samsung SSD 256GB 860 Pro SATA 6Gbps 2.5" V-NAND MLC 560/530 MB/s Max. 100K IOPS / 90K IOPS 300TBW endurance /5yrs
440,39 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare256 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory
SAMSUNG 860 EVO 500GB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K
423,38 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare500 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory
SAMSUNG 860 EVO 250GB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K
205,86 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare250 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory
Intel SSD 760p Series (256GB, M.2 80mm, PCIe 3.0 x4, 3D2, TLC) Generic Single Pack
451,08 L
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare256 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate205000 IOPSMaximum Random Write Rate265000 IOPSMaximum Sequenti
Intel SSD 760p Series (128GB, M.2 80mm, PCIe 3.0 x4, 3D2, TLC) Generic Single Pack
183,08 L
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare128 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate105000 IOPSMaximum Random Write Rate160000 IOPSMaximum Sequenti
Intel SSD 760p Series (512GB, M.2 80mm, PCIe 3.0 x4, 3D2, TLC) Generic Single Pack
687,30 L
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequenti
SAMSUNG 860 PRO 1TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 560 / 530 MB/s, Random Read/Write IOPS 100K/90K
1.077,60 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare1 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory Ce
Samsung SSD 512GB 860 Pro SATA 6Gbps 2.5" V-NAND MLC 560/530 MB/s Max. 100K IOPS / 90K IOPS 600TBW endurance /5yrs
640,43 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory
SAMSUNG 860 EVO 1TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K
675,90 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare1 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache1 GBSSD ControllerSamsung MJXFlash Memory Cell
Intel SSD 660p Series (2.0TB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack
1.202,93 L
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare2 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
Intel SSD 660p Series (1.0TB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack
602,51 L
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare1 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
SAMSUNG 860 EVO 2TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K
1.602,84 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare2 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache4 GBSSD ControllerSamsung MJXFlash Memory Cell
SAMSUNG 870 QVO 1TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 560 / 530 MB/s, Random Read/Write IOPS 98K/88K
592,13 L
Locatie dispozitivInternFactor forma2.5" 7mmCapacitate de stocare1 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsSSD ControllerSamsung MKXTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level
Intel SSD 545s Series (512GB, 2.5in SATA 6Gb/s, 3D2, TLC) Retail Box Single Pack
424,96 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate75000 IOPSMaximum Rando
Intel SSD 545s Series (128GB, 2.5in SATA 6Gb/s, 3D2, TLC) Retail Box Single Pack
124,20 L
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare128 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate70000 IOPSMaximum Rando
Intel SSD 665p Series (1.0TB, M.2 80mm PCIe 3.0 x4, 3D3, QLC) Retail Box Single Pack
968,47 L
Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCI Express 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate160000 IOPSMaximum Random Write Ra
Intel SSD 760p Series (1.024TB, M.2 80mm PCIe 3.0 x4, 3D2, TLC) Retail Box Single Pack
1.301,01 L
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1.02 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Intel SSD 660p Series (2.0TB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Generic Single Pack
1.202,93 L
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
Intel SSD 660p Series (512GB, M.2 80mm PCIe 3.0 x4, 3D2, QLC) Retail Box Single Pack
267,27 L
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare512 GBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate90000 IOPSMaximum Random Write Rate22