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ChuangoChuango senzor de vibratie wireless WD-80

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Chuango senzor de vibratie wireless WD-80

70,09 L

Alimentare: DC 3V (AAA 1.5V LR03 x 2). Consum in stand-by: ≤29uA. Consum in modul alarma: ≤22.2mA. Distanta de transmisie: ≤100m (in camp deschis). Frecventa radio: 315MHz/433.92.92MHz (±75KHz)

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Acumulator VRLA Caranda 12V 5A

55,00 L

Acumulator VRLA Caranda 12V 5A

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Acumulator VRLA Caranda 12V 4.5A

60,00 L

Acumulator VRLA Caranda 12V 4.5A

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Acumulator VRLA Caranda 12V 8.5A

96,00 L

Acumulator VRLA Caranda 12V 8.5A

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Acumulator VRLA Caranda 12V 12A

140,00 L

Acumulator VRLA Caranda 12V 12A

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Acumulator VRLA Caranda 12V 18A

199,00 L

Acumulator VRLA Caranda 12V 18A

CarandaBaterie Gel VRLA Caranda 12V 100A

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Acumulator Gel VRLA Caranda 12V 100A

1.263,00 L

Acumulator Gel VRLA Caranda 12V 100A

CarandaBaterie Gel VRLA Caranda 12V 200A

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Acumulator Gel VRLA Caranda 12V 200A

2.538,00 L

Acumulator Gel VRLA Caranda 12V 200A

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SAMSUNG 970 EVO PLUS 250GB SSD, M.2 2280, NVMe, Read/Write: 3500 / 2300 MB/s, Random Read/Write IOPS 250K/550K

328,28 L

Factor formaM.2 22x80mmCapacitate de stocare250 GBSuporta canal de dateNVMe PCIe® Gen3SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare externăNegruMaximum Random Read Rate17000 IOPSMaximum

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SAMSUNG 970 EVO PLUS 500GB SSD, M.2 2280, NVMe, Read/Write: 3500 / 3200 MB/s, Random Read/Write IOPS 480K/550K

413,09 L

Factor formaM.2 22x80mmCapacitate de stocare500 GBSuporta canal de dateNVMe PCIe® Gen3SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare externăNegruMaximum Random Read Rate19000 IOPSMaximum

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Samsung SSD 970 PRO 1TB, M.2 NVMe

1.779,57 L

Factor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCIe NVMe 3.0 x4SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare la exteriorBlackMaximum Random Read Rate500000 IOPSM

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SAMSUNG 970 EVO PRO 512GB SSD, M.2 2280, NVMe, Read/Write: 3400 / 2500 MB/s, Random Read/Write IOPS 370K/500K

898,20 L

Factor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.0 x4SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare la exteriorBlackMaximum Random Read Rate370000 IOP

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SAMSUNG 970 EVO PLUS 1TB SSD, M.2 2280, NVMe, Read/Write: 3500 / 3300 MB/s, Random Read/Write IOPS 600K/550K

677,91 L

Factor formaM.2 22x80mmCapacitate de stocare1 TBSuporta canal de dateNVMe PCIe® Gen3SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare externăNegruMaximum Random Read Rate19000 IOPSMaximum R

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SAMSUNG 970 EVO PLUS 2TB SSD, M.2 2280, NVMe, Read/Write: 3500 / 3300 MB/s, Random Read/Write IOPS 620K/560K

1.160,56 L

Locatie dispozitivInternFactor formaM.2 22x80mmCapacitate de stocare2 TBSuporta canal de dateNVMe PCIe® Gen3SSD ControllerSamsung PhoenixTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level CellCuloare externăNegruMaximum Random Read

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SAMSUNG 860 EVO 4TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K

2.927,40 L

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Samsung SSD 256GB 860 Pro SATA 6Gbps 2.5" V-NAND MLC 560/530 MB/s Max. 100K IOPS / 90K IOPS 300TBW endurance /5yrs

440,39 L

Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare256 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory

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SAMSUNG 860 EVO 500GB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K

423,38 L

Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare500 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory

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SAMSUNG 860 EVO 250GB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K

205,86 L

Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare250 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory

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SAMSUNG 860 PRO 1TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 560 / 530 MB/s, Random Read/Write IOPS 100K/90K

1.077,60 L

Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare1 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory Ce

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Samsung SSD 512GB 860 Pro SATA 6Gbps 2.5" V-NAND MLC 560/530 MB/s Max. 100K IOPS / 90K IOPS 600TBW endurance /5yrs

640,43 L

Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache512 MBSSD ControllerSamsung MJXFlash Memory

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SAMSUNG 860 EVO 1TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K

675,90 L

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SAMSUNG 860 EVO 2TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 550 / 520 MB/s, Random Read/Write IOPS 98K/90K

1.602,84 L

Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare2 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsCapacitate de stocare instalata a memoriei cache4 GBSSD ControllerSamsung MJXFlash Memory Cell

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SAMSUNG 870 QVO 1TB SSD, 2.5” 7mm, SATA 6Gb/s, Read/Write: 560 / 530 MB/s, Random Read/Write IOPS 98K/88K

592,48 L

Locatie dispozitivInternFactor forma2.5" 7mmCapacitate de stocare1 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsSSD ControllerSamsung MKXTehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyMulti-Level