Artikel-Nr.: MS-SP24
Marke: Melsee
Alimentator MS-SP24 MELSEE
Alimentator MS-SP24 MELSEE Tensiune: 100V-240V
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Artikel-Nr.: MS-SP24
Marke: Melsee
Alimentator MS-SP24 MELSEE Tensiune: 100V-240V
Artikel-Nr.: MS-UP
Marke: Melsee
Circuit deblocare MS-UP MELSEE Se utilizeaza pentru conectarea posturilor exterioare cu MS-SP Tensiune: DC 18V
Artikel-Nr.: SSDSC2KW010T8X1 A
Marke: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare1.02 TBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate75000 IOPSMaximum Rand
Artikel-Nr.: SSDSC2KW128G8X1 A
Marke: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare128 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate70000 IOPSMaximum Rando
Artikel-Nr.: SSDSC2KW512G8X1 A
Marke: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate75000 IOPSMaximum Rando
Artikel-Nr.: SSDPEKNW010T8X1 A
Marke: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare1 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
Artikel-Nr.: SSDPEKNW020T801 A
Marke: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
Artikel-Nr.: SSDPEKNW020T8X1 A
Marke: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare2 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
Artikel-Nr.: SSDPEKNW512G8X1 A
Marke: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare512 GBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate90000 IOPSMaximum Random Write Rate22
Artikel-Nr.: SSDPEKNW010T9X1 A
Marke: INTEL
Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCI Express 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate160000 IOPSMaximum Random Write Ra
Artikel-Nr.: SSDPEKNU010TZX1 A
Marke: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare1 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellAccesorii incluseScurt Ghid de utilizareMaximum Random Read Rat
Artikel-Nr.: SSDPEKNU020TZX1 A
Marke: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare2 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellAccesorii incluseScurt Ghid de utilizareMaximum Random Read Rat
Artikel-Nr.: SSDPEKNU512GZX1 A
Marke: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare512 GBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellAccesorii incluseScurt Ghid de utilizareMaximum Random Read R
Artikel-Nr.: SSDPEKKW010T8X1 A
Marke: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1.02 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Artikel-Nr.: SSDPEKKW128G801 A
Marke: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare128 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate105000 IOPSMaximum Random Write Rate160000 IOPSMaximum Sequenti
Artikel-Nr.: SSDPEKKW020T8X1 A
Marke: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2.05 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent