Reference: ECMMD256GC410
Brand: EMTEC
USB Flash Drive Emtec 256GB Color Mix, USB 3.1
USB Flash Drive Emtec 256GB Color Mix, USB 3.1
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Reference: ECMMD256GC410
Brand: EMTEC
USB Flash Drive Emtec 256GB Color Mix, USB 3.1
Reference: ECMMD128G2C410
Brand: EMTEC
USB Flash Drive Emtec 128GB Color Mix, USB 2.0
Reference: R200S-2
Brand: HONEYWELL RESIDEO
Detector de fum cu baterie, HONEYWELL R200S-2;Memorie alarmă,Durată de serviciu / garanţie de 10 ani; Autotestare automată; Starea de eroare oprită pentru 9 ore;Notifi care sonoră:dispozitiv acustic cu 85 dB - 3 m; Clasă de protecţie:IP20; Tip de baterie:
Reference: R200C-2
Brand: HONEYWELL RESIDEO
Detector Stand alone CO Honeywell R200C-2; Memorie alarmă,Durată de serviciu / garanţie de 10 ani;"ALARMĂ" roşie pentru persoane hipoacuzice sau cu deficienţe auditive; Alarmă oprită pentru 10 minute; Starea de eroare oprită pentru 9 ore; Grad d
Reference: SSDPEKKW020T8X1 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2.05 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Reference: SSDPEKKW256G801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare256 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate205000 IOPSMaximum Random Write Rate265000 IOPSMaximum Sequenti
Reference: SSDPEKKW128G801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare128 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate105000 IOPSMaximum Random Write Rate160000 IOPSMaximum Sequenti
Reference: SSDPEKKW512G801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequenti
Reference: SSDPEKNW020T8X1 A
Brand: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare2 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
Reference: SSDPEKNW010T8X1 A
Brand: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare1 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
Reference: SSDSC2KW512G8X1 A
Brand: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate75000 IOPSMaximum Rando
Reference: SSDSC2KW128G8X1 A
Brand: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare128 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate70000 IOPSMaximum Rando
Reference: SSDPEKNW010T9X1 A
Brand: INTEL
Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCI Express 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate160000 IOPSMaximum Random Write Ra
Reference: SSDPEKKW010T8X1 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1.02 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Reference: SSDPEKNW020T801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write
Reference: SSDPEKNW512G8X1 A
Brand: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare512 GBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate90000 IOPSMaximum Random Write Rate22