Reference: 6-EVF-80
Brand: Chilwee
Baterie semitractiune Deep Cycle 12V 80Ah Chilwee 6-EVF-80 GEL
Baterie semitractiune Deep Cycle 12V 80Ah Chilwee 6-EVF-80 GEL
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Reference: 6-EVF-80
Brand: Chilwee
Baterie semitractiune Deep Cycle 12V 80Ah Chilwee 6-EVF-80 GEL
Reference: 6-EVF-100A
Brand: Chilwee
Baterie semitractiune Deep Cycle 12V 100Ah Chilwee 6-EVF-100A GEL
Reference: 6-EVF-120A
Brand: Chilwee
Baterie semitractiune Deep Cycle 12V 120Ah Chilwee 6-EVF-120A GEL
Reference: STLG40000400
Brand: LACIE
NAS Lacie, 2 Bay, 40TB, USB 3.0, 2-Bay RAID Array, 2 porturi dual Thunderbolt3 + USB 3.1, 7200rpm, buffer 64MB viteza maxima 420 MB/s, SRS rescue, argintiu
Reference: STHJ16000800
Brand: LACIE
NAS Lacie, 16TB, 2big RAID, USB 3.1, USB 3.0, Transfer speed: up to 440 MB/s, 5 ani serviciul de Rescue Recovery, Negru
Reference: SSDPEKKW020T8X1 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2.05 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Reference: SSDPEKKW256G801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare256 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate205000 IOPSMaximum Random Write Rate265000 IOPSMaximum Sequenti
Reference: SSDPEKKW128G801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare128 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate105000 IOPSMaximum Random Write Rate160000 IOPSMaximum Sequenti
Reference: SSDPEKKW512G801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare512 GBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequenti
Reference: SSDPEKNW020T8X1 A
Brand: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare2 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
Reference: SSDPEKNW010T8X1 A
Brand: INTEL
Locatie dispozitivPlug-in CardFactor formaM.2 22x80mmCapacitate de stocare1 TBSuporta canal de dateNVMe PCIe® Gen3Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write Rate220
Reference: SSDSC2KW512G8X1 A
Brand: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare512 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate75000 IOPSMaximum Rando
Reference: SSDSC2KW128G8X1 A
Brand: INTEL
Locatia dispozitivuluiInternalFactor de forma2.5"Capacitate de stocare128 GBSuporta canal de dateSATA III-600Rata de transfer extern a datelor sustinuta6 GbpsFlash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate70000 IOPSMaximum Rando
Reference: SSDPEKNW010T9X1 A
Brand: INTEL
Locatia dispozitivuluiInternalFactor de formaM.2 (2280)Capacitate de stocare1 TBSuporta canal de datePCI Express 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate160000 IOPSMaximum Random Write Ra
Reference: SSDPEKKW010T8X1 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare1.02 TBSuporta canal de datePCIe NVMe 3.1 x4Flash Memory Cell TechnologyTriple-Level CellMaximum Random Read Rate340000 IOPSMaximum Random Write Rate275000 IOPSMaximum Sequent
Reference: SSDPEKNW020T801 A
Brand: INTEL
Locatia dispozitivuluiPlug-in CardFactor de formaM.2 (2280)Capacitate de stocare2 TBSuporta canal de datePCIe NVMe 3.0 x4Tehnologia pentru memorieNAND FlashFlash Memory Cell TechnologyQuad-Level CellMaximum Random Read Rate220000 IOPSMaximum Random Write